Epitaxial (incrementum)Mixta gas

In semiconductor industria, in Gas ad germinare unum vel layers of materia per eget vapor depositione in diligenter delectus subiecto dicitur epitaxial Gas.

Communiter Silicon epitaxial gasorum includit dichlorosilane, Silicon tetrachloride etsilanene. Maxime propter epitaxial Silicon deposition, Silicon cadmiae film depositione, Silicon Nitride film depositione, Amorpho Silicon film depositione pro solis cellulis et alium photorceptores, etc. et crevit in quo unum crystallum est positum et crevit super superficiem in materia est posita et in superficiem subiectum.

Chemical vapor depositione (CVD) mixto Gas

CVD est modus depositing quaedam elementa et componit per Gas tempus eget reactiones per volatile componit, id est, a film formatam modum per Gas tempus eget profectae. Fretus genus amet formatae, chemical vapor depositione (cvd) Gas usus est etiam diversis.

DopingMixta Gas

In fabricare de semiconductor cogitationes et integrated circuits, quaedam impudicities sunt doped in semiconductor materiae ad materias requiritur conductivity type et quaedam resistentia ad officinis resistores, PN ad Doping Processus dicitur Doping Gas in doping.

Maxime includit Arsine, phosphoro, phosphoro trifluoride, phosphoro pentafluoride, arsenic trifluoride, arsenic Pentafluoride,boron trifluoride, Diborane, etc.

Plerumque, in doping fontem est mixto cum carrier Gas (ut Argon et NITROGENIUM) in fonte arca. Post miscentes, in Gas fluxus continue infusum in diffusu fornacem et circumdat lagam, depositing dopants super superficiem lagae et reagit Silicon ad generare Doped metalla Migrate in Silicon.

EtchingGas mixtisque

Etching est ad Etch auferetur processus superficies (ut metallum film, Silicon cadmiae film, etc.) in subiecto sine photoresist masking, cum conservando regio cum photoresist masing, ut ad obtinendum requiritur imaginatione exemplar super superficiem.

Etching modi includit infectum eget etching et sicca eget etching. In Gas in siccis eget etching dicitur etching Gas.

Etching Gas est plerumque fluoride Gas (halide), utCarbon Tetrafluoride, NITROGENIUM trifluoride, Trifluorhetahane, Hexafluoroethane, perfluoropropane, etc.