Maxima moles electronic specialis Gas - NITROGENIUM trifluoride NF3

Nostra patriae scriptor seliconductor industria et panel industria ponere altus campester of felicitatem. Nitrogen trifluoride, quod est necessaria et maxima-volumine specialis electronic Gas in productione et processui tabulata et semiconductors, habet lata foro spatium.

Communiter Fluorine, quibus Special Electronic Gasorum includitSulphur Hexafluoride (SF6), Tungsten Hexafluoride (Wf6):Carbon Tetrafluoride (Cf4), Trifluorthehane (Chf3), nitrogen trifluoride (NF3), Hexafloroethane (C2f6) et Octopoluaropropaneo (c3f8). NITROGENIUM Trifluoride (NF3) est maxime usus ut fluorine fons hydrogenii fluoride fluoride-fluoride Gas summus industria eget lasers. Et effective pars (circiter XXV%) de reactionem industria inter H2-O2 et F2 potest dimissi a laser radialis, ita HF-of Lasers sunt maxime promissum lasers in eget lasers.

Nitrogen Trifluoride est optimum plasma Etching Gas in Microelectronics industria. Nam etching Silicon et Silicon Nitride, NITROGENIUM Trifluoride habet altiorem etching rate et selectivity quam ipsum tetrafluoride et mixtisque carbonis tetrafluoride et oxygeni et non habet pollutio ad superficiem. Maxime in etching de integrated circuitu materiae cum crassitudine minus quam 1.5um, NITROGENIUM trifluoride est valde optimum etching rate et selectivity, relinquens non residuum super superficiem et objectum, et quoque a valde bonus purgatio agente. Cum progressionem de Nanotechnology et magna-scale development of the electronics industria, in demanda erit crescere diem per diem.

Sicut genus fluorine, quibus specialis Gas, nitrogen trifluoride (NF3) est maxima electronic specialis Gas productum in foro. Est chemica in cubiculum temperatus, magis activae quam oxygeni, magis firmum quam fluorine et facile tractare caliditas.

NITROGENIUM Trifluoride est maxime usus est plasma Etching Gas et reactionem thalamum Purgato agente, idoneam ad vestibulum agris ut semiconductor eu, plana panel ostentat, optical fibrae, photovoltaic cellulis, etc.

Compared with other fluorine-containing electronic gases, nitrogen trifluoride has the advantages of fast reaction and high efficiency, especially in the etching of silicon-containing materials such as silicon nitride, it has a high etching rate and selectivity, leaving no residue on the surface of the etched object, and is also a very good cleaning agent, and it is non-polluting to the surface and can meet the needs of the processus processus.